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MF8 6 2
The item can replace BF862
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SPECIFICATION
PRODUCT: N -channel junction FET MODEL: MF862 SOT23
HOPE MICROELECTRONIC CO.,LIMITED
Tel:+86-755-82973805
Fax:+86-755-82973550
E-mail: sales@hoperf.com
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N-channel junction FET
FEATURES * High transition frequency for excellent sensitivity in AM car radios * High transfer admittance. APPLICATIONS * Pre-amplifiers in AM car radios.
handbook, halfpage
MF862
PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION
3
DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable.
1 Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VDS VGS (off) IDSS Ptot |yfs| Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. Ts 92 C CONDITIONS MIN. - - 10 - 30 - TYP. - -0.7 - - 40 - MAX. 20 - 25 225 - 150 UNIT V V mA mW mS C
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N-channel junction FET
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation storage temperature junction temperature Ts 92 C CONDITIONS - - - - - - -65 - MIN.
MF862
MAX. 20 20 -20 40 10 225 +150 150 V V V
UNIT
mA mA mW C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s Notes 1. Soldering point of the gate lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 260 UNIT K/W
MGS298
handbook, halfpage
250
Ptot (mW)
200
150
100
50
0 0 40 80 120 Ts (C) 160
Fig.2 Power derating curve.
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N-channel junction FET
STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)GSS VGS VGS (off) IGSS IDSS PARAMETER gate-source breakdown voltage gate-source forward voltage gate-source cut-off voltage reverse gate current drain-source current CONDITIONS IGS = -1 A; VDS = 0 VDS = 0; IG = 1 mA VDS = 8 V; ID = 1 A VGS = -15 V; VDS = 0 V GS = 0; VDS = 8 V MIN. -20 - - - 10 TYP. - - -0.7 - -
MF862
MAX. - 1 - -1 25
UNIT V V V nA mA
DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL yfs gos Ciss Crss en fT PARAMETER common source forward transfer T j = 25 C admittance common source output conductance input capacitance reverse transfer capacitance equivalent noise input voltage transition frequency T j = 25 C f = 1 MHz f = 1 MHz f = 100 kHz CONDITIONS MIN. 30 - - - - - TYP. 40 - 10 2.5 0.8 640 MAX. - 400 - - - - UNIT mS S pF pF nV/Hz MHz
Tel:+86-755-82973805
Fax:+86-755-82973550
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E-mail: sales@hoperf.com
http://www.hoperf.com
N-channel junction FET
PACKAGE OUTLINE
MF862
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
Tel:+86-755-82973805
Fax:+86-755-82973550
E-mail: sales@hoperf.com
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